Wide Temperature Range Characterization and Compact Modeling of Transistors for Space Exploration and Quantum Computing

Abstract

This dissertation presents a comprehensive investigation into the wide-temperature-range characterization and compact modeling of advanced semiconductor devices for space exploration and quantum computing applications. At cryogenic temperatures, typically defined as those below 120 K, semiconductor devices exhibit distinct electrical characteristics, such as increased mobility, steeper subthreshold swing, and improved noise performance, making them highly attractive for high-performance and quantum computing applications. However, operating these devices across extreme temperatures, ranging from deep cryogenic stages (<77 K) to high-temperature space mission cycles (>400 K), presents modeling and reliability challenges. Standard compact models become inadequate because they primarily focus on the room-temperature range. Therefore, this work explores device characterization and compact modeling for 22 nm FDSOI (22FDX technology), LDMOS, and SiGe HBT technologies across a wide temperature range. In this work, 22FDX core devices were characterized from 20 K to 390 K, and the experimental results were used to validate the BSIM-IMG 102.9.6 model. For high-voltage LDMOS devices, the impact of carrier freeze-out cannot be ignored at deep cryogenic temperatures [1, 2, 3]. The drain current 𝐼D is characterized, and a model for the significant increase in on-resistance 𝑅on at low temperatures is proposed by incorporating incomplete ionization and the Poole-Frenkel effect. In the realm of SiGe HBTs, characterization is presented down to 1.7 K. To ensure accurate simulation across high-power regimes and wide temperature ranges, an improved self-heating effect (SHE) model was developed [4]. Furthermore, cryogenic extensions for the Mextram model were implemented and validated down to 19 K, providing a robust framework for extreme environment electronics [5]. Specifically, this work focuses on: • Wide-Temperature 22FDX Characterization and Modeling: Characterization of core 22FDX devices was performed from 20 K to 390 K. This involved systematic parameter extraction and a rigorous evaluation of model accuracy across the full operating range. • LDMOS Freeze-out Characterization and Modeling: Physical modeling of incomplete ionization and the Poole-Frenkel effect was implemented within the HiSIM-HV framework to accurately describe the increase in drift resistance (𝑅drift) at cryogenic temperatures. The ionization energy (𝐸ion) was extracted directly from experimental data. • SiGe HBT Characterization and Modeling at Cryogenic Temperatures: The DC behavior of SiGe HBTs was investigated from 1.7 K to 400 K, and the RF behavior was investigated from 151 K to 400 K. The standard Mextram 505.5 framework was enhanced with cryogenic extensions to capture critical low-temperature phenomena such as carrier freeze-out and modified self-heating behavior. • Improved SH Model and Parameter Extraction: Existing Mextram and HICUM SH compact models were evaluated, and their physical basis was derived. The limitation of these models was identified as the lack of an explicit dependence of the dynamic 𝑟th on ambient temperature (𝑇amb) and power dissipation (𝑃diss). The SH model was then developed within the Mextram 505.5 framework by incorporating a practical 𝑟th. Additionally, a parameter extraction method was developed.